دیتاشیت FDD3860
مشخصات دیتاشیت
| نام دیتاشیت |
FDD3860
|
| حجم فایل |
345.46
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FDD3860
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
3.1W;69W
-
Total Gate Charge (Qg@Vgs):
31nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
1740pF@50V
-
Continuous Drain Current (Id):
6.2A
-
Gate Threshold Voltage (Vgs(th)@Id):
4.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
36mΩ@5.9A,10V
-
Package:
TO-252
-
Manufacturer:
onsemi
-
Series:
PowerTrench®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
6.2A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
36mOhm @ 5.9A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
31nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1740pF @ 50V
-
FET Feature:
-
-
Power Dissipation (Max):
3.1W (Ta), 69W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D-PAK (TO-252AA)
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
FDD386
-
detail:
N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount D-PAK (TO-252AA)
